Design, Characterization, Modeling and Analysis of High Voltage Silicon Carbide Power Devices
| Author | : Jun Wang |
| Publisher | : |
| Total Pages | : 186 |
| Release | : 2010 |
| ISBN-10 | : OCLC:502146432 |
| ISBN-13 | : |
| Rating | : 4/5 ( Downloads) |
Book Synopsis Design, Characterization, Modeling and Analysis of High Voltage Silicon Carbide Power Devices by : Jun Wang
Download or read book Design, Characterization, Modeling and Analysis of High Voltage Silicon Carbide Power Devices written by Jun Wang and published by . This book was released on 2010 with total page 186 pages. Available in PDF, EPUB and Kindle. Book excerpt: Keywords: emitter turn-off thyristor (ETO), insulated gate bipolar transistor (IGBT), Silicon carbide (SiC), metal-oxide-semiconductor field effect transistor, solid-state transformer (SST).
