Characterization of 4H-SiC MOSFETs Using First Principles Coulomb Scattering Mobility Modeling and Device Simulation
Author | : Siddharth Potbhare |
Publisher | : |
Total Pages | : |
Release | : 2005 |
ISBN-10 | : OCLC:498311561 |
ISBN-13 | : |
Rating | : 4/5 ( Downloads) |
Book Synopsis Characterization of 4H-SiC MOSFETs Using First Principles Coulomb Scattering Mobility Modeling and Device Simulation by : Siddharth Potbhare
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