Characterization of a High Frequency Probe Assembly for Integrated Circuit Measurement

Download or read book Characterization of a High Frequency Probe Assembly for Integrated Circuit Measurement written by Ramon L. Jesch and published by . This book was released on 1975 with total page 64 pages. Available in PDF, EPUB and Kindle. Book excerpt: A detailed, applications-oriented description of a measurement technique that characterizes a high-frequency probe assembly for integrated circuit measurements is given along with the procedure that extracts the parasitic effects of the probe assembly from measurements made at the input connectors of the probe assembly. The scattering parameters of an integrated-circuit device or transistor can now be extracted and accurately determined up to 2 GHz at the wafer stage of assembly. This represents a significant advance over conventional techniques that enable only dc parameters to be measured. Measurement results using this technique are given along with the precision of values obtained as well as the nature of the measurement bias introduced by the probe assembly.