Laser Induced Chemical Vapor Deposition of Gallium Arsenide Films

Download or read book Laser Induced Chemical Vapor Deposition of Gallium Arsenide Films written by Shirley S. Chu and published by . This book was released on 1987 with total page 60 pages. Available in PDF, EPUB and Kindle. Book excerpt: The objective of this project is to investigate the epitaxial growth of device quality III-V semiconductor films by the free electron laser-induced epitaxial growth technique at low temperatures. Major efforts have been directed to (1) the design and construction of a low pressure reaction chamber and control system, and (2) the laser induced deposition and characterization of epitaxial gallium aresenide films by computer controlled MOCVD. Gallium arsenide films have been deposited by the ArF laser-induced MOCVD over a wide range of process parameters. Device quality homoepitaxial GaAs films with specular mirror smooth surface have been obtained in the substrate temperature range of 425-500 C. Keywords: Excimer laser, Laser induced, Epitaxial growth, Doping concentration, Mobility, Gallium arsenides.