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Language: en
Pages: 276
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Type: BOOK - Published: 1986 - Publisher:
Language: en
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Type: BOOK - Published: 2010 - Publisher:
ABSTRACT: Next generation of semiconductor device will not only based on the charge transport properties of the carrier, but also their spin degree of freedom.
Language: en
Pages: 288
Pages: 288
Type: BOOK - Published: 1997 - Publisher:
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Type: BOOK - Published: 1993 - Publisher:
Language: en
Pages: 6
Pages: 6
Type: BOOK - Published: 1993 - Publisher:
The theoretical research performed under the auspices of this grant has played a central role in the investigation of optical and magneto-optical properties of