This book primarily focuses on the radiation effects and compact model of silicon-germanium (SiGe) heterojunction bipolar transistors (HBTs). It introduces the

Unfriendly to conventional electronic devices, circuits, and systems, extreme environments represent a serious challenge to designers and mission architects. Th

All model parameters are fundamentally coupled together, so that directly measured individual parameters, although widely used and accepted, may initially only

This peer-reviewed book explores the methodologies that are used for effective research, design and innovation in the vast field of millimeter-wave circuits, an

SiGe HBT BiCMOS technology is the obvious groundbreaker of the Si heterostructures application space. To date virtually every major player in the communications