Self-aligned-gate AlGaN/GaN Heterostructure Field-effect Transistor with Titanium Nitride Gate

Author	:
Publisher	:
Total Pages	:
Release	: 2016
ISBN-10	: OCLC:1051944435
ISBN-13	:
Rating	: 4/5 ( Downloads)

DOWNLOAD EBOOK

Book Synopsis Self-aligned-gate AlGaN/GaN Heterostructure Field-effect Transistor with Titanium Nitride Gate by :

Download or read book Self-aligned-gate AlGaN/GaN Heterostructure Field-effect Transistor with Titanium Nitride Gate written by and published by . This book was released on 2016 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt:

Self-aligned-gate AlGaN/GaN Heterostructure Field-effect Transistor with Titanium Nitride Gate Related Books

Language: en
Pages:

Self-aligned-gate AlGaN/GaN Heterostructure Field-effect Transistor with Titanium Nitride Gate

Authors:

Categories:

Type: BOOK - Published: 2016 - Publisher:

DOWNLOAD EBOOK

Language: en
Pages: 274

Self-aligned-gate Heterostructure Field-effect Transistors

Authors: Ru-Liang Lee

Categories:

Type: BOOK - Published: 1993 - Publisher:

DOWNLOAD EBOOK

Language: en
Pages: 71

Liquid Phase Deposited Titanium Oxide as the Gate Insulator for AlGaN/GaN Heterostructure Field Effect Transistors

Authors: 蔡明記

Categories:

Type: BOOK - Published: 2008 - Publisher:

DOWNLOAD EBOOK

Language: en
Pages: 73

Self-aligned AlGaN/GaN Transistors for Sub-mm Wave Applications

Authors: Omair I. Saadat

Categories:

Type: BOOK - Published: 2010 - Publisher:

DOWNLOAD EBOOK

This thesis describes work done towards realizing self-aligned AlGaN/GaN high electron mobility transistors (HEMTs). Self-aligned transistors are important for

Language: en
Pages: 176

Processing and Characterization of Advanced AlGaN/GaN Heterojunction Effect Transistors

Authors: Jaesun Lee

Categories: Heterostructures

Type: BOOK - Published: 2006 - Publisher:

DOWNLOAD EBOOK

Abstract: AlGaN/GaN high electron mobility transistors (HEMTs) have demonstrated high current levels, high breakdown voltages, and high frequency power performa