While group IV or III-V based device technologies have reached their technical limitations (e.g., limited detection wavelength range or low power handling capab

Advances in wide bandgap semiconductor materials are enabling the development of a new generation of power semiconductor devices that far exceed the performance

While group IV or III-V based device technologies have reached their technical limitations (e.g., limited detection wavelength range or low power handling capab

Owing to their unique characteristics, direct wide bandgap energy, large breakdown field, and excellent electron transport properties, including operation at hi

Introducing up-to-date coverage of research in electron field emission from nanostructures, Vacuum Nanoelectronic Devices outlines the physics of quantum nanost