An in Situ X-ray Photoelectron Spectroscopy Analysis of Thin Films Created Through Physical Vapor Deposition of Aluminum and Plasma Enhanced Chemical Vapor Deposition of Trimethylsilane

An in Situ X-ray Photoelectron Spectroscopy Analysis of Thin Films Created Through Physical Vapor Deposition of Aluminum and Plasma Enhanced Chemical Vapor Deposition of Trimethylsilane
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Total Pages : 142
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ISBN-10 : OCLC:217264313
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Book Synopsis An in Situ X-ray Photoelectron Spectroscopy Analysis of Thin Films Created Through Physical Vapor Deposition of Aluminum and Plasma Enhanced Chemical Vapor Deposition of Trimethylsilane by : Paul Robert Scott

Download or read book An in Situ X-ray Photoelectron Spectroscopy Analysis of Thin Films Created Through Physical Vapor Deposition of Aluminum and Plasma Enhanced Chemical Vapor Deposition of Trimethylsilane written by Paul Robert Scott and published by . This book was released on 2007 with total page 142 pages. Available in PDF, EPUB and Kindle. Book excerpt: The motivation for this work was to study environmentally friendly thin films that have a potential to act as a corrosion protection scheme for Aluminum alloys. To do this, a vacuum system capable of producing physical vapor deposition and plasma enhanced chemical vapor deposition was designed, built and mated to an XPS system. Pure Aluminum was deposited onto a sample substrate of Aluminum 6061 alloy at a rate of one Angstrom per second in a base pressure of 5x10^-7 Torr. This was followed by deposition of an amorphous Silicon Carbide film through PECVD of Trimethylsilane. The sample was then transferred under vacuum into the XPS chamber for a depth profiled spectroscopic analysis. Data collected during multiple cycles of Argon ion sputtering show C-C, C-Si, Si-C, Si-Al, Al-O, Al-Al and Al-Si interactions. The interactions between Aluminum and Silicon give promise that a strong bond exists at the Aluminum interface.


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