Characterization and Modeling of Sic Multi-Chip Power Modules

Download or read book Characterization and Modeling of Sic Multi-Chip Power Modules written by Ryan Taylor and published by . This book was released on 2022 with total page 0 pages. Available in PDF, EPUB and Kindle. Book excerpt: The accelerating commercialization of wide bandgap technology has led to increased demand for accurate circuit-level simulation models of devices such as Silicon-Carbide (SiC) MOSFET power modules. These models assist with optimizing systems to minimize overshoot and electromagnetic interference (EMI) associated with wide bandgap (WBG) switching conditions. As a result, capturing these behaviors requires more detailed and advanced modeling and characterization techniques than traditional Silicon (Si) semiconductors. These advancements include improvements to the parasitic package model, transistor characterization, and computational efficiency of the synthesized model. In this dissertation, a commercially available half-bridge SiC power module is characterized and modeled in SPICE. Simulation and empirical characterization techniques are used to quantify the packaging parasitics of the module. These parasitics include self-inductances, mutual coupling terms, and baseplate capacitances (BPC) that are sensitive to the high di/dt and dv/dt events that occur during switching transitions. The simulation predictions and empirical measurements are used to cross-validate each other and determine the preferred method for quantifying each parasitic parameter. The SiC transistors are characterized using a combination of commercial equipment and custom measurement techniques. The characterization process is described in detail and sensitivities are uncovered in that are crucial to the modeling effort. The characterization includes an advanced conduction analysis (ACA) system that combined with a self-heating removal algorithm is capable of quantifying the short-channel behavior of the device at high voltage. Finally, the package model and SiC MOSFET characteristics are used to synthesize a compact behavioral model. The model is evaluated in terms of its accuracy through comparison of quantitative error metrics across a wide range of double pulse test (DPT) operating conditions. The model is also evaluated in a multi-level inverter simulation to determine its computational efficiency and convergence behavior. It is shown that the model is highly accurate across the selected range of operating conditions and is capable of converging quickly in complex circuit topologies.