Characterization of 4H-SiC MOSFETs Using First Principles Coulomb Scattering Mobility Modeling and Device Simulation
| Author | : Siddharth Potbhare |
| Publisher | : |
| Total Pages | : |
| Release | : 2005 |
| ISBN-10 | : OCLC:498311561 |
| ISBN-13 | : |
| Rating | : 4/5 ( Downloads) |
Book Synopsis Characterization of 4H-SiC MOSFETs Using First Principles Coulomb Scattering Mobility Modeling and Device Simulation by : Siddharth Potbhare
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