Characterization of Heteroepitaxial Silicon Germanium Carbon Layers for Metal Oxide Semiconductor Field Effect Transistor (MOSFET) Applications

Author	: Peter John Bjeletich
Publisher	:
Total Pages	: 480
Release	: 2004
ISBN-10	: UCAL:X69928
ISBN-13	:
Rating	: 4/5 ( Downloads)

DOWNLOAD EBOOK

Book Synopsis Characterization of Heteroepitaxial Silicon Germanium Carbon Layers for Metal Oxide Semiconductor Field Effect Transistor (MOSFET) Applications by : Peter John Bjeletich

Download or read book Characterization of Heteroepitaxial Silicon Germanium Carbon Layers for Metal Oxide Semiconductor Field Effect Transistor (MOSFET) Applications written by Peter John Bjeletich and published by . This book was released on 2004 with total page 480 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Characterization of Heteroepitaxial Silicon Germanium Carbon Layers for Metal Oxide Semiconductor Field Effect Transistor (MOSFET) Applications Related Books

Language: en
Pages: 480

Characterization of Heteroepitaxial Silicon Germanium Carbon Layers for Metal Oxide Semiconductor Field Effect Transistor (MOSFET) Applications

Authors: Peter John Bjeletich

Categories:

Type: BOOK - Published: 2004 - Publisher:

DOWNLOAD EBOOK

Language: en
Pages: 464

Metal Impurities in Silicon- and Germanium-Based Technologies

Authors: Cor Claeys

Categories: Technology & Engineering

Type: BOOK - Published: 2018-08-13 - Publisher: Springer

DOWNLOAD EBOOK

This book provides a unique review of various aspects of metallic contamination in Si and Ge-based semiconductors. It discusses all of the important metals incl

Language: en
Pages:

Low Resistivity Contact Methodologies for Silicon, Silicon Germanium and Silicon Carbon Source/Drain Junctions of Nanoscale CMOS Integrated Circuits

Authors:

Categories:

Type: BOOK - Published: 2004 - Publisher:

DOWNLOAD EBOOK

State-of-the-art p-channel metal oxide semiconductor field effect transistors (MOSFETs) employ Si(1-x)Ge(x) source/drain junctions to induce uniaxial compressiv

Language: en
Pages: 90

Characterization of Silicon Carbide Junction Field Effect Transistors and Metal Oxide Semiconductor Field Effect Transistors

Authors: Alvin Ong

Categories: Power semiconductors

Type: BOOK - Published: 2007 - Publisher:

DOWNLOAD EBOOK

Generating the device models requires measured device characteristics like drain-source on-resistance and switching times. The objective of this research was to

Language: en
Pages: 102

Advanced Material and Device Applications with Germanium

Authors: Sanghyun Lee

Categories: Science

Type: BOOK - Published: 2018-10-03 - Publisher: BoD – Books on Demand

DOWNLOAD EBOOK

Germanium is an elemental semiconductor, which played an important role in the birth of the semiconductor but soon was replaced with silicon. However, germanium