Computational Fluid Dynamics Modeling of SiC Chemical Vapor Deposition

Download or read book Computational Fluid Dynamics Modeling of SiC Chemical Vapor Deposition written by Yingquan Song and published by . This book was released on 2002 with total page 194 pages. Available in PDF, EPUB and Kindle. Book excerpt: Computational fluid dynamics (CFD) modeling is used to simulate chemical vapor deposition (CVD) of silicon carbide (SiC), a wide-band gap semiconductor with a high breakdown field. The effects on SiC CVD of precursor concentration, flow rate, temperature, pressure, heat transfer and reactor geometry are investigated. Also demonstrates the possibilty of doping SiC with solid source vanadium during CVD growth of SiC epitaxial layers.