This work presents a comprehensive modeling strategy for advanced large-size AlGaN/GaN HEMTs. A 22-element equivalent circuit with 12 extrinsic elements, includ

All model parameters are fundamentally coupled together, so that directly measured individual parameters, although widely used and accepted, may initially only

Nowadays, the microelectronics technology is based on the mature and very well established silicon (Si) technology. However, Si exhibits some important limitati