Laser Induced Chemical Vapor Epitaxial Growth of Gallium Arsenide Films

Download or read book Laser Induced Chemical Vapor Epitaxial Growth of Gallium Arsenide Films written by Shirley S. Chu and published by . This book was released on 1988 with total page 30 pages. Available in PDF, EPUB and Kindle. Book excerpt: The objective of this project is to investigate the epitaxial growth of device quality III-V semiconductor films by the free electron laser-induced epitaxial growth technique at low temperatures. Efforts during the past year has been focused to the homo- and heteroepitaxial growth and characterization of gallium arsenide (GaAs) films on GaAs and silicon (Si) substrates by laser-induced metalorganic chemical vapor deposition (LIMOCVD). ArF excimer laser (193 nm) was used before the free electron laser is available. The reaction between trimethylgallium and arsine in hydrogen under reduced pressure was used for the epitaxial growth of GaAs. Homoepitaxial GaAs films deposited by LIMOCVD at 425 - 500 C are similar to conventional homoepitaxial GaAs films (at 700 C) in properties. Heteroepitaxial GaAs films on Si substrates of (100) orientation have been deposited at 500 C by LIMOCVD with emphasis on the cleanliness of the substrate surface. Transmission electron microscopy and Raman spectra indicated that the heteroepitaxial GaAs films are presumably of a (111) orientation and that their crystalline perfection is superior to those deposited by other techniques. Keywords: Epitaxial growth; Chemical vapor deposition; Excimer; Homoepitaxial growth; Heteroepitaxial growth; Dislocation; Doping concentration.