Study of Performance and Reliability in GaN on Si Power Devices: Impacts of Oxygen Plasma in P-GaN HEMTs and Trench Processes in Schottky Barrier Diode
| Author | : |
| Publisher | : |
| Total Pages | : 0 |
| Release | : 2022 |
| ISBN-10 | : OCLC:1413737799 |
| ISBN-13 | : |
| Rating | : 4/5 ( Downloads) |
Book Synopsis Study of Performance and Reliability in GaN on Si Power Devices: Impacts of Oxygen Plasma in P-GaN HEMTs and Trench Processes in Schottky Barrier Diode by :
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